From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor
نویسندگان
چکیده
We demonstrate that the conductance through a single-electron transistor at low temperature is in quantitative agreement with predictions of the equilibrium Anderson model. The Kondo effect is observed when an unpaired electron is localized within the transistor. Tuning the unpaired electron’s energy toward the Fermi level in nearby leads produces a crossover between the Kondo and mixedvalence regimes of the Anderson model. [S0031-9007(98)07897-1]
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